GSTIN: 23AFSFS8111D1Z0

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FAZ-C2/1-NA-SP

yangjie-faz-c2-1-na-sp_silicocean – FAZ-C2/1-NA-SP by YANGJIE

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer YANGJIEAsian Brands
Mfr. Part # MG450HF12TLC2
SilicOcean Part Number Si20602007
Package C2
Description 2.307kW 1.2kV C2 Single IGBTs RoHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Manufacturer YANGJIE
Mfr. Part # FAZ-C2/1-NA-SP
Category Single IGBTs
Pd - Power Dissipation 2.307kW
Td(off) 502ns
Td(on) 161ns
Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Reverse Transfer Capacitance (Cres) 1.1nF
Input Capacitance(Cies) 25nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.2V@12mA
Gate Charge(Qg) 3.62uC
Pulsed Current- Forward(Ifm) 900A
Switching Energy(Eoff) 28.5mJ
Turn-On Energy (Eon) 23.2mJ
EDA Models EasyEDA Model

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541600000
USHTS 8541600080
TARIC 8541600000
CAHTS 8541600010
BRHTS 85416010
INHTS 85416000
MXHTS 8541.60.01

Additional Information

Minimum 1
Multiple 1
Standard Packaging 6
Sales Unit Piece

FAZ-C2/1-NA-SP

SKU: yangjie-faz-c2-1-na-sp_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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