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SIS903DN-T1-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | Vishay Intertech |
| Mfr. Part # | SIS903DN-T1-GE3 |
| SilicOcean Part Number | Si3279452 |
| Package | PowerPAK1212-8 |
| Description | 20V 6A 2.6W 40mΩ@1.8V 1V 2 P-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Manufacturer | Vishay Intertech |
| Mfr. Part # | SIS903DN-T1-GE3 |
| Key Attributes | Dual P-Channel, Current: 6A, Voltage: -20V |
| Category | FET, MOSFET Arrays |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Current - Continuous Drain(Id) | 6A |
| Pd - Power Dissipation | 2.6W |
| RDS(on) | 40mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2.565nF |
| Gate Charge(Qg) | [email protected] |
| Operating Temperature | -55℃~+150℃ |
| EDA Models | EasyEDA Model |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
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