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SI4435DDY-T1-GE3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | Vishay Intertech |
| Mfr. Part # | SI4435DDY-T1-GE3 |
| Silicocean Part # | C10491 |
| Package | SOIC-8 |
| Description | 30V 11.4A 5W 35mΩ@4.5V,9.4A 3V@250uA 1 P-Channel SOIC-8 MOSFETs ROHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Category | Thyristors/MOSFETs |
| Manufacturer | Vishay Intertech |
| Package | SOIC-8 |
| Drain to Source Voltage | 30V |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 11.4A |
| Type | P-Channel |
| Pd - Power Dissipation | 5W |
| RDS(on) | 35mΩ@4.5V,9.4A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.35nF |
| Gate Charge(Qg) | 50nC@10V |
| Output Capacitance(Coss) | 215pF |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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