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IRFR120ATM-VB

vbsemi-elec-irfr120atm-vb_silicocean – IRFR120ATM-VB by VBsemi Elec

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer VBsemi Elec
Mfr. Part # IRFR120ATM-VB
Silicocean Part # C7569008
Package TO-252
Description 100V 15A 96W 114mΩ@10V,3A 3.5V 1 N-Channel TO-252 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/MOSFETs
Manufacturer VBsemi Elec
Package TO-252
Drain to Source Voltage 100V
Operating Temperature -55℃~+150℃@(Tj)
Current - Continuous Drain(Id) 15A
Pd - Power Dissipation 96W
RDS(on) 114mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Reverse Transfer Capacitance (Crss@Vds) 60pF@25V
Number 1 N-Channel
Input Capacitance(Ciss) 950pF@25V
Gate Charge(Qg) 24nC@10V

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 1
Multiple 1
Standard Packaging 2500
Sales Unit Piece

IRFR120ATM-VB

SKU: vbsemi-elec-irfr120atm-vb_silicocean

Pricing & Procurement Details

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Available to Order

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