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FDT434P
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | VBsemi ElecAsian Brands |
| Mfr. Part # | FDT434P-NL-VB |
| SilicOcean Part Number | Si6705264 |
| Package | SOT-223 |
| Description | P-Channel 35V 6.2A 4.2W Surface Mount SOT-223 |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| EDA Models | EasyEDA Model |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Current - Continuous Drain(Id) | 6.2A |
| Gate Charge(Qg) | 23nC@10V |
| Pd - Power Dissipation | 4.2W |
| Output Capacitance(Coss) | 120pF |
| Number | 1 P-Channel |
| RDS(on) | 40mΩ@10V;48mΩ@4.5V |
| Manufacturer | VBsemi Elec |
| Ciss-Input Capacitance | 970pF |
| Type | P-Channel |
| Operating Temperature - | -55℃~+150℃ |
| Drain to Source Voltage | 35V |
| Category | Single FETs, MOSFETs |
| Key Attributes | MOSFET P-CH 35V 6.2A SOT-223 |
| Mfr. Part # | FDT434P |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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