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FDS6162N7
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | onsemi |
| Mfr. Part # | FDS6162N7 |
| Silicocean Part # | C3289678 |
| Package | SO-8 |
| Key Attributes | N-Channel, Current: 23A, Voltage: 20V |
| Description | 20V 23A 3W 5mΩ@2.5V 1.5V@250uA 1 N-Channel SO-8 MOSFETs ROHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Category | Thyristors/MOSFETs |
| Manufacturer | onsemi |
| Package | SO-8 |
| Drain to Source Voltage | 20V |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 23A |
| Type | N-Channel |
| Pd - Power Dissipation | 3W |
| RDS(on) | 5mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 706pF |
| Number | 1 N-Channel |
| Input Capacitance(Ciss) | 5.521nF |
| Gate Charge(Qg) | [email protected] |
| Output Capacitance(Coss) | 1473pF |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Product added to list!