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NVD2955T4G-JSM

NVD2955T4G-JSM
Manufacturer JSMSEMI
Mfr. Part # NVD2955T4G-JSM
Silicocean Part # C18192086
Package TO-252-2
Description 60V 13A 132mΩ@4.5V,5A 31.3W 2.5V@250uA 1 P-Channel TO-252-2 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Product Attributes

Category Thyristors/MOSFETs
Manufacturer JSMSEMI
Package TO-252-2
Drain to Source Voltage 60V
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 13A
Type P-Channel
RDS(on) 132mΩ@4.5V,5A
Pd - Power Dissipation 31.3W
Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 P-Channel
Input Capacitance(Ciss) -
Gate Charge(Qg) 11.8nC@4.5V
Output Capacitance(Coss) -

Environmental & Export

RoHS yes
ECCN N/A
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Resources

Minimum 1
Multiple 1
Standard Packaging 2500
Sales Unit Piece

NVD2955T4G-JSM

SKU: jsmsemi-nvd2955t4g-jsm_silicocean

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