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SI3831DV-T1-E3

jscj-si3831dv-t1-e3_silicocean – SI3831DV-T1-E3 by JSCJ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer JSCJAsian Brands
Mfr. Part # MCF600N170L2E3
SilicOcean Part Number Si22392036
Package E3
Description 3.66kW 1.7kV FS (Field Stop) E3 Single IGBTs RoHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Manufacturer JSCJ
Mfr. Part # SI3831DV-T1-E3
Category Single IGBTs
Pd - Power Dissipation 3.66kW
Td(off) 595ns
Td(on) 160ns
Operating Temperature -40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces) 1.7kV
Reverse Transfer Capacitance (Cres) 0.52nF
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.5V@24mA
Pulsed Current- Forward(Ifm) 1200A
Switching Energy(Eoff) 115mJ
Turn-On Energy (Eon) 145mJ
EDA Models EasyEDA Model

Compliance & Export Information

RoHS yes
CNHTS 8541600000
USHTS 8541600080
TARIC 8541600000
CAHTS 8541600010
BRHTS 85416010
INHTS 85416000
MXHTS 8541.60.01

Additional Information

Minimum 1
Multiple 1
Standard Packaging 6
Sales Unit Piece

SI3831DV-T1-E3

SKU: jscj-si3831dv-t1-e3_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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