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IPW60R041P6

infineon-technologies-ipw60r041p6_silicocean – IPW60R041P6 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer Infineon Technologies
Mfr. Part # IPW60R041P6
Silicocean Part # C537449
Package TO-247-3
Description 650V 49A 41mΩ@10V,35.5A 481W 4.5V 1 N-Channel TO-247-3 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/MOSFETs
Manufacturer Infineon Technologies
Package TO-247-3
Drain to Source Voltage 650V
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 49A
RDS(on) 41mΩ@10V,35.5A
Pd - Power Dissipation 481W
Gate Threshold Voltage (Vgs(th)@Id) 4.5V
Reverse Transfer Capacitance (Crss@Vds) -
Number 1 N-Channel
Input Capacitance(Ciss) 8.18nF@100V
Gate Charge(Qg) 170nC@10V

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 1
Multiple 1
Standard Packaging 240
Sales Unit Piece

IPW60R041P6

SKU: infineon-technologies-ipw60r041p6_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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