GSTIN: 23AFSFS8111D1Z0

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FS75R07N2E4_B11

infineon-technologies-fs75r07n2e4-b11_silicocean – FS75R07N2E4_B11 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer Infineon Technologies
Mfr. Part # FS75R07N2E4B11
SilicOcean Part Number Si3190317
Description 250W 75A 650V FS (Field Stop) IGBT Modules RoHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Manufacturer Infineon Technologies
Mfr. Part # FS75R07N2E4_B11
Category IGBT Modules
Pd - Power Dissipation 250W
Current - Collector(Ic) 75A
Collector-Emitter Breakdown Voltage (Vces) 650V
Input Capacitance(Cies) 4.6nF@25V
IGBT Type FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 1.95V@15V,75A
Operating Temperature -40℃~+150℃@(Tj)
EDA Models EasyEDA Model

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541600000
USHTS 8541600080
TARIC 8541600000
CAHTS 8541600010
BRHTS 85416010
INHTS 85416000
MXHTS 8541.60.01

Additional Information

Minimum 1
Multiple 1
Standard Packaging 15
Sales Unit Piece

FS75R07N2E4_B11

SKU: infineon-technologies-fs75r07n2e4-b11_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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