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MBT3904DW1T1G

fuxinsemi-mbt3904dw1t1g_silicocean – MBT3904DW1T1G by FUXINSEMI

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer FUXINSEMI
Mfr. Part # MBT3904DW1T1G
Silicocean Part # C7422627
Package SOT-363
Description 40V 200mW 300@10mA,1V 200mA NPN SOT-363 Bipolar (BJT) ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/Bipolar (BJT)
Manufacturer FUXINSEMI
Package SOT-363
Current - Collector Cutoff 50nA
Collector - Emitter Voltage VCEO 40V
Pd - Power Dissipation 200mW
DC Current Gain 300@10mA,1V
Current - Collector(Ic) 200mA
Operating Temperature -55℃~+150℃
Transition frequency(fT) 300MHz
Vce Saturation(VCE(sat)) 300mV
type NPN

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541210000
USHTS 8541210095
TARIC 8541210000
CAHTS 8541210000
BRHTS 85412199
INHTS 85412100
MXHTS 8541.21.01

Additional Information

Minimum 20
Multiple 20
Standard Packaging 3000
Sales Unit Piece

MBT3904DW1T1G

SKU: fuxinsemi-mbt3904dw1t1g_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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