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DMG6601LVT-7

diodes-incorporated-dmg6601lvt-7_silicocean – DMG6601LVT-7 by Diodes Incorporated

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer Diodes Incorporated
Mfr. Part # DMG6601LVT-7
SilicOcean Part Number Si278728
Package TSOT-26
Description N-Channel+P-Channel Array 30V 3.8A 1.3W Surface Mount TSOT-26
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Pd - Power Dissipation 1.3W
EDA Models EasyEDA Model
Output Capacitance(Coss) 46pF
Operating Temperature -55℃~+150℃
Gate Charge(Qg) 13.8nC@10V
Input Capacitance(Ciss) 541pF
Number 1 N-Channel + 1 P-Channel
Reverse Transfer Capacitance (Crss@Vds) 43pF
Gate Threshold Voltage (Vgs(th)) 1.5V
Manufacturer Diodes Incorporated
RDS(on) 142mΩ@4.5V
Current - Continuous Drain(Id) 3.8A
Type N-Channel + P-Channel
Drain to Source Voltage 30V
Category FET, MOSFET Arrays
Key Attributes MOSFET N-CH+P-CH ARR 30V 3.8A TSOT-26
Mfr. Part # DMG6601LVT-7

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 5
Multiple 5
Standard Packaging 3000
Sales Unit Piece

DMG6601LVT-7

SKU: diodes-incorporated-dmg6601lvt-7_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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