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SI4800BDY-T1-E3-VB

SI4800BDY-T1-E3-VB
Manufacturer VBsemi Elec
Mfr. Part # SI4800BDY-T1-E3-VB
Silicocean Part # C4355101
Package SO-8
Description 30V 13A 2.2W 8mΩ@10V,10A 1V 1 N-Channel SO-8 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Product Attributes

Category Thyristors/MOSFETs
Manufacturer VBsemi Elec
Package SO-8
Drain to Source Voltage 30V
Operating Temperature -55℃~+150℃
Configuration -
Current - Continuous Drain(Id) 13A
Pd - Power Dissipation 2.2W
RDS(on) 8mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)@Id) 1V
Reverse Transfer Capacitance (Crss@Vds) 73pF@15V
Number 1 N-Channel
Input Capacitance(Ciss) 800pF@15V
Gate Charge(Qg) 6.8nC@10V

Environmental & Export

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Resources

Minimum 5
Multiple 5
Standard Packaging 4000
Sales Unit Piece

SI4800BDY-T1-E3-VB

SKU: vbsemi-elec-si4800bdy-t1-e3-vb_silicocean

Price & Procurement

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