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SI4800BDY-T1-E3-VB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | VBsemi Elec |
| Mfr. Part # | SI4800BDY-T1-E3-VB |
| Silicocean Part # | C4355101 |
| Package | SO-8 |
| Description | 30V 13A 2.2W 8mΩ@10V,10A 1V 1 N-Channel SO-8 MOSFETs ROHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Category | Thyristors/MOSFETs |
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Drain to Source Voltage | 30V |
| Operating Temperature | -55℃~+150℃ |
| Configuration | - |
| Current - Continuous Drain(Id) | 13A |
| Pd - Power Dissipation | 2.2W |
| RDS(on) | 8mΩ@10V,10A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF@15V |
| Number | 1 N-Channel |
| Input Capacitance(Ciss) | 800pF@15V |
| Gate Charge(Qg) | 6.8nC@10V |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
Product added to list!