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SI3443DV-T1-GE3-VB

vbsemi-elec-si3443dv-t1-ge3-vb_silicocean – SI3443DV-T1-GE3-VB by VBsemi Elec

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer VBsemi Elec
Mfr. Part # SI3443DV-T1-GE3-VB
Silicocean Part # C7524969
Package SOT-23-6
Description 30V 4.1A 2W 2V 1 P-Channel SOT-23-6 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/MOSFETs
Manufacturer VBsemi Elec
Package SOT-23-6
Drain to Source Voltage 30V
Current - Continuous Drain(Id) 4.1A
Operating Temperature -55℃~+150℃
Pd - Power Dissipation 2W
RDS(on) -
Gate Threshold Voltage (Vgs(th)@Id) 2V
Number 1 P-Channel
Input Capacitance(Ciss) 450pF@15V

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 5
Multiple 5
Standard Packaging 3000
Sales Unit Piece

SI3443DV-T1-GE3-VB

SKU: vbsemi-elec-si3443dv-t1-ge3-vb_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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