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PSMN4R8-100BSEJ

PSMN4R8-100BSEJ
Manufacturer Nexperia
Mfr. Part # PSMN4R8-100BSEJ
Silicocean Part # C458260
Package D2PAK
Description 100V 120A 405W 4.8mΩ@10V,25A 3V 1 N-Channel D2PAK MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Product Attributes

Category Thyristors/MOSFETs
Manufacturer Nexperia
Package D2PAK
Drain to Source Voltage 100V
Operating Temperature -55℃~+175℃
Current - Continuous Drain(Id) 120A
Pd - Power Dissipation 405W
RDS(on) 4.8mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)@Id) 3V
Reverse Transfer Capacitance (Crss@Vds) 643pF@50V
Number 1 N-Channel
Input Capacitance(Ciss) 14.4nF@50V
Gate Charge(Qg) 278nC@10V

Environmental & Export

RoHS yes
ECCN EAR99
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Resources

Minimum 1
Multiple 1
Standard Packaging 800
Sales Unit Piece

PSMN4R8-100BSEJ

SKU: nexperia-psmn4r8-100bsej_silicocean

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