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Si2307BDS-T1-E3-HXY
| Manufacturer | HXY MOSFET |
| Mfr. Part # | Si2307BDS-T1-E3-HXY |
| Silicocean Part # | C22367257 |
| Package | SOT-23 |
| Description | 30V 4.1A 1.32W 56mΩ@10V 2.5V@250uA 1 P-Channel SOT-23 MOSFETs ROHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Product Attributes
| Category | Thyristors/MOSFETs |
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Drain to Source Voltage | 30V |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 4.1A |
| Pd - Power Dissipation | 1.32W |
| Type | P-Channel |
| RDS(on) | 56mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 650pF |
| Gate Charge(Qg) | 7.3nC@4.5V |
| Output Capacitance(Coss) | 115pF |
Environmental & Export
| RoHS | yes |
| ECCN | N/A |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Resources
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Product added to list!