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MBT3904DW1T1G-HXY

MBT3904DW1T1G-HXY
Manufacturer HXY MOSFET
Mfr. Part # MBT3904DW1T1G-HXY
Silicocean Part # C46682384
Package SOT-363
Description 40V 300@10mA,1V 200mW 200mA SOT-363 Bipolar (BJT) ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Product Attributes

Category Thyristors/Bipolar (BJT)
Manufacturer HXY MOSFET
Package SOT-363
Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Collector - Emitter Voltage VCEO 40V
DC Current Gain 300@10mA,1V
Pd - Power Dissipation 200mW
Current - Collector(Ic) 200mA
Operating Temperature -55℃~+150℃
Transition frequency(fT) 300MHz
Vce Saturation(VCE(sat)) 300mV@50mA,5mA

Environmental & Export

RoHS yes
ECCN -
CNHTS 8541210000
USHTS 8541210095
TARIC 8541210000
CAHTS 8541210000
BRHTS 85412199
INHTS 85412100
MXHTS 8541.21.01

Additional Resources

Minimum 20
Multiple 20
Standard Packaging 3000
Sales Unit Piece

MBT3904DW1T1G-HXY

SKU: hxy-mosfet-mbt3904dw1t1g-hxy_silicocean

Price & Procurement

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