GSTIN: 23AFSFS8111D1Z0

Shopping Cart

Your cart is empty.

Subtotal

$0.00

Shipping and taxes calculated at checkout.

MBT3904DW1T1G-HXY

hxy-mosfet-mbt3904dw1t1g-hxy_silicocean – MBT3904DW1T1G-HXY by HXY MOSFET

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer HXY MOSFET
Mfr. Part # MBT3904DW1T1G-HXY
Silicocean Part # C46682384
Package SOT-363
Description 40V 300@10mA,1V 200mW 200mA SOT-363 Bipolar (BJT) ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/Bipolar (BJT)
Manufacturer HXY MOSFET
Package SOT-363
Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 50nA
Collector - Emitter Voltage VCEO 40V
DC Current Gain 300@10mA,1V
Pd - Power Dissipation 200mW
Current - Collector(Ic) 200mA
Operating Temperature -55℃~+150℃
Transition frequency(fT) 300MHz
Vce Saturation(VCE(sat)) 300mV@50mA,5mA

Compliance & Export Information

RoHS yes
ECCN -
CNHTS 8541210000
USHTS 8541210095
TARIC 8541210000
CAHTS 8541210000
BRHTS 85412199
INHTS 85412100
MXHTS 8541.21.01

Additional Information

Minimum 20
Multiple 20
Standard Packaging 3000
Sales Unit Piece

MBT3904DW1T1G-HXY

SKU: hxy-mosfet-mbt3904dw1t1g-hxy_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

Request a Quote

Add-On Services

Request a Quote

Product added to list!

J

Joe

Sourcing Specialist

"Hi there! Finding obsolete or hard-to-find chips can be a headache. If you're working on a BOM or need a quick quote, my team and I are ready to help."