GSTIN: 23AFSFS8111D1Z0

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HIPD06P004N

hxy-mosfet-hipd06p004n_silicocean – HIPD06P004N by HXY MOSFET

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer HXY MOSFET
Mfr. Part # HIPD06P004N
Silicocean Part # C42401275
Package TO-252-2L
Description 60V 20A 100mΩ@4.5V 40W 2.5V@250uA TO-252-2L MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Category Thyristors/MOSFETs
Manufacturer HXY MOSFET
Package TO-252-2L
Drain to Source Voltage 60V
Operating Temperature -55℃~+175℃
Configuration -
Current - Continuous Drain(Id) 20A
Type P-Channel
RDS(on) 100mΩ@4.5V
Pd - Power Dissipation 40W
Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds) 155pF
Number -
Input Capacitance(Ciss) 2.46nF
Gate Charge(Qg) 48nC@10V
Output Capacitance(Coss) 220pF

Compliance & Export Information

RoHS yes
ECCN -
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 1
Multiple 1
Standard Packaging 2500
Sales Unit Piece

HIPD06P004N

SKU: hxy-mosfet-hipd06p004n_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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