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BSS806NH6327-HXY

BSS806NH6327-HXY
Manufacturer HXY MOSFET
Mfr. Part # BSS806NH6327-HXY
Silicocean Part # C20606241
Package SOT-23
Description 20V 3A 53mΩ@4.5V 900mW 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Product Attributes

Category Thyristors/MOSFETs
Manufacturer HXY MOSFET
Package SOT-23
Drain to Source Voltage 20V
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 3A
Type N-Channel
RDS(on) 53mΩ@4.5V
Pd - Power Dissipation 900mW
Gate Threshold Voltage (Vgs(th)@Id) 1.2V@250uA
Number 1 N-Channel
Gate Charge(Qg) 5nC@4.5V

Environmental & Export

RoHS yes
ECCN -
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Resources

Minimum 5
Multiple 5
Standard Packaging 3000
Sales Unit Piece

BSS806NH6327-HXY

SKU: hxy-mosfet-bss806nh6327-hxy_silicocean

Price & Procurement

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