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IPT60R055CFD7
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | Infineon Technologies |
| Mfr. Part # | IPT60R055CFD7XTMA1 |
| SilicOcean Part Number | Si5240738 |
| Package | HSOF-8 |
| Description | 650V 55mΩ@10V 1 N-channel 236W HSOF-8 Single FETs, MOSFETs RoHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Manufacturer | Infineon Technologies |
| Mfr. Part # | IPT60R055CFD7 |
| Category | Single FETs, MOSFETs |
| Drain to Source Voltage | 650V |
| Operating Temperature - | -55℃~+150℃ |
| Ciss-Input Capacitance | 2.724nF |
| RDS(on) | 55mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 987pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 236W |
| Gate Charge(Qg) | 67nC@10V |
| Current - Continuous Drain(Id) | 27A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| EDA Models | EasyEDA Model |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Additional Information
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
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